A power semiconductor device including source and drain regions located in a lateral arrangement in a first portion of the device, and at least one current providing cell located in a second portion of the device and spaced apart from the first portion at least by a substrate region of a first conductivity type.
申请公布号
WO2007042834(A3)
申请公布日期
2007.06.14
申请号
WO2006GB03833
申请日期
2006.10.16
申请人
ECO SEMICONDUCTORS LIMITED;MADATHIL, SANKARA, NARAYANAN, EKKANATH;GREEN, DAVID, WILLIAM
发明人
MADATHIL, SANKARA, NARAYANAN, EKKANATH;GREEN, DAVID, WILLIAM
