LIGHT EMITTING DEVICE HAVING ZENOR DIODE THEREIN AND METHOD OF FABRICATING THE SAME

摘要

A light emitting device having a Zener diode and a manufacturing method thereof are provided to easily release heat from the light emitting device and to prevent damages due to static discharge by using a P-type silicon substrate having a Zener diode region and a light emitting region. A P-type silicon substrate(21) has a Zener diode region(A) and a light emitting diode region(B). A first N-type compound semiconductor layer(23a) is joined to the Zener diode region of the P-type silicon substrate to express Zener diode characteristic together with the P-type silicon substrate. A second N-type compound semiconductor layer(23b) is located on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is separated from the first N-type compound semiconductor layer. A P-type compound semiconductor layer(27) is located on an upper portion of the second N-type compound semiconductor layer. An active layer(25) is disposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.