| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve an element response speed while increasing a traveling speed of a generated carrier in a semiconductor-metal-semiconductor (MSM) type light-receiving element. <P>SOLUTION: An undoped InP buffer layer 102 and an undoped InAlGaAs composition tilted-light absorbing layer 103 are successively laminated on a semi-insulating InP substrate 101 by a Metal Organic Chemical Vapor Deposition (MOCVD) method. Next, a Schottky negative electrode 104 and a Schottky positive electrode 105 are formed on the surface of the light absorbing layer 103 with a vapor deposition method. The composition tilted-light absorbing layer 103 is formed of a composition tilted-structure from In<SB>0.52</SB>Al<SB>0.48</SB>As (a forbidden band width 1.49 eV) to In<SB>0.53</SB>Ga<SB>0.47</SB>As (a forbidden band width 0.77 eV) on the surface side. An energy difference between its conduction bands and that between its valence bands are respectively 0.5 eV and 0.2 eV. <P>COPYRIGHT: (C)2007,JPO&INPIT |
