| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve such characteristics as open voltage, curve factor, photoelectric conversion efficiency, etc. <P>SOLUTION: The multi-junction type silicon thin film photoelectric converter comprises two mutually laminated adjacent amorphous silicon photoelectric converter units (41, 42) respectively comprising p-conductivity type layers (411, 421) mutually laminated in the same order, substantially i-type photoelectric conversion layers (412, 422) made of amorphous silicon hydrogenide or amorphous silicon hydrogenide alloy, and n-conductivity type layers (413, 423). The specific n-conductivity type layer (413) located between the two i-type photoelectric conversion layers (412, 422) has a thickness ranging from 5 nm to 30 nm and a conductivity ranging from 1×10<SP>-4</SP>S/cm to less than 1×10<SP>-3</SP>S/cm. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
