| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing slurry and a method of polishing a substrate using the slurry, which can polish the substrate having a metal in a reproducible and tolerable speed. <P>SOLUTION: The present invention relates to the chemical mechanical polishing slurry comprising an oxidizing agent, a complexing agent, an abrasive, and an optional surfactant, as well as the method for using the chemical mechanical polishing slurry to remove copper alloy, titanium, titanium nitride, tantalum and tantalum nitride containing layers from the substrate. The slurry does not include a separate film-forming agent. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
