发明名称 |
ORGANIC INSULATING MATERIAL, POLISHING MATERIAL FOR COPPER FILM COMPOUND MATERIAL, AND POLISHING METHOD |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing material which exhibits high polishing speed of CMP and permits CMP treatment wherein the roughness of metal surface is low and a level difference is small between a metal film and an insulating resin film. <P>SOLUTION: The polishing material for metal is used to polish a surface to be polished having at least an organic insulating material and a copper or a copper alloy. In this case, it contains an inorganic acid, an oxidant and colloidal silica particles. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
申请公布号 |
JP2007150264(A) |
申请公布日期 |
2007.06.14 |
申请号 |
JP20060258805 |
申请日期 |
2006.09.25 |
申请人 |
HITACHI CHEM CO LTD |
发明人 |
KAMIGATA YASUO;ONO YUTAKA;NOMURA YUTAKA |
分类号 |
H01L21/304;B24B37/00;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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