发明名称 |
METHOD OF FORMING SEMICONDUCTOR DEVICE USING EMBEDDED L-SHAPED SPACER, AND SEMICONDUCTOR DEVICE THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which an L-shaped spacer is embedded. SOLUTION: The method includes a step of defining an L-shaped spacer on each side of a gate region of a substrate; and a step of embedding the L-shaped spacer in an oxide layer so that the oxide layer covers a portion of the substrate to a predetermined distance from a side edge of the L-shaped spacer. Further, an oxide layer is removed to expose the L-shaped spacer. COPYRIGHT: (C)2007,JPO&INPIT
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申请公布号 |
JP2007150320(A) |
申请公布日期 |
2007.06.14 |
申请号 |
JP20060319319 |
申请日期 |
2006.11.27 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM>;CHARTERED SEMICONDUCTOR MFG LTD |
发明人 |
LUO ZHIJIONG;ATUL C AJMERA;TEH YOUNG WAY |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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地址 |
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