| 摘要 |
PROBLEM TO BE SOLVED: To deal with a problem in which variations arise in the transistor characteristics. SOLUTION: In a semiconductor device in which a plurality of pixels having a transistor for driving a light emitting element are provided in the form of a matrix, the transistor that each of the plurality of pixels includes has a plurality of semiconductors. Each of the plurality of semiconductors is the one crystallized by laser light irradiation. The plurality of semiconductors are connected electrically. At least two semiconductors among the plurality of semiconductors are arranged in different pixel regions. The length in the scanning direction of the laser light in the channel formation region in the plurality of transistors and the channel length are longer than the pixel pitch of the pixel, respectively. COPYRIGHT: (C)2007,JPO&INPIT
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