| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emission semiconductor laser whereby electrostatic destruction is prevented and the cost is reduced. SOLUTION: The surface-emission semiconductor laser 100 includes a board 101; a light emitting element 160 including a first mirror 102 formed above the board 101, an active layer 103 formed above the first mirror, and a second mirror 104 formed above the active layer; a support 163 comprising a layer formed above the board and shared with those of the first mirror, the active layer, and the second mirror; and a rectifier element 170 including semiconductor layers 116, 117, 118 formed above the support, and the film thickness of the semiconductor layer is selected to an odd number of multiple ofλ/4n.λis a design wavelength of light emitted from the light emitting element, and n is a refractive index of the semiconductor layer with respect to the light. COPYRIGHT: (C)2007,JPO&INPIT
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