发明名称 ETCHING METHOD FOR SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide an etching method for a semiconductor wafer which improves flatness and nano topography. SOLUTION: In the etching method of the semiconductor wafer, a plurality of semiconductor wafers are held in a state that plate surfaces are kept opposed to each other to effect etching while rotating them. A rotary member is arranged between the semiconductor wafers. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007149956(A) 申请公布日期 2007.06.14
申请号 JP20050342191 申请日期 2005.11.28
申请人 TOSHIBA CERAMICS CO LTD 发明人 SHOJI MAKOTO;NAKATANI TAKAFUMI
分类号 H01L21/306;H01L21/304 主分类号 H01L21/306
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