| 摘要 |
The substrate processing apparatus includes a plurality of processing chambers. A given processing chamber is cleaned by first executing first processing during which voltage application control is executed to control a voltage applied to an electrostatic chuck based upon first processing voltage application information provided for the particular processing chamber while drawing an inert gas into the processing chamber and evacuating the processing chamber sustaining therein low pressure conditions therein and then executing second processing during which voltage application control is executed to control the voltage application to the electrostatic chuck based upon second processing voltage application information for the processing chamber while drawing in the inert gas and evacuating the processing chamber, the internal pressure of which is set to a high level. As a result, the inside of the processing chamber can be cleaned with voltage settings optimized for the structure adopted in the processing chamber.
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