| 摘要 |
The invention relates to a measuring method for the in-situ control of a chemical etching process of latent ion tracks to pores in an electrically non-conductive or low-conductive substrate. For that purpose, condenser plates (KPl, KP2) are provided, between which the substrate (SS) is arranged in parallel as a dielectric (DK). Said condenser plates are located in a condenser circle (KK) with a source of alternating current (WSQ). The capacity (C) of the condenser (KO), which is formed by the two condenser plates (KP1, KP2), is measured and taken as a measure for the etching progress. A depth increase of the pores (PO) within the substrate (SS) is indicated by a capacity increase, a breakthrough of the pores (PO) through the substrate (SS) by a strong drop in capacity as well as by the subsequent radial enlargement of the pores (PO) due to a new increase in capacity. An alternative combination with a conductive measuring method (I) is possible. |
