| 摘要 |
Disclosed is a plasma processing apparatus (100) comprising a plasma-generating means, a processing vessel defining the processing chamber for performing a plasma process on an object substrate, a substrate stage arranged within the processing vessel on which the object substrate is placed, and an exhausting means for reducing the pressure in the processing vessel. In this plasma processing apparatus (100), a wall (27a) of a support part (27) for supporting a microwave-transmitting plate (28) is at a high electron temperature exceeding at least 1.5 eV when a plasma is generated. A covering portion (60) composed of a heat-resistant insulating material such as quartz is so formed as to cover the wall (27a).
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