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发明名称
Method for forming the isolation layer of semiconductor device
摘要
申请公布号
KR100728649(B1)
申请公布日期
2007.06.14
申请号
KR20050085016
申请日期
2005.09.13
申请人
发明人
分类号
H01L21/762
主分类号
H01L21/762
代理机构
代理人
主权项
地址
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