| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device capable of reducing the detection level of spontaneous emission light by a semiconductor photodetector and thereby improving photodetection accuracy by reflecting the spontaneous emission light by high reflectivity. SOLUTION: A surface light emissive semiconductor laser 1, a layer composed of a light transmitter 31 and a metal 32, and the semiconductor photodetector 2 are piled up in this order and integrally formed. The surface light emissive semiconductor laser 1 is formed of a semiconductor laminated structure 11 including a light emission region 14A and a light emission window 17A for emitting the emitted light of the light emission region 14A in a lamination direction. The semiconductor photodetector 2 has a semiconductor laminated structure 21 including a light absorbing layer 23 for absorbing a part of light made incident from the lamination direction. The light transmitter 31 is formed in a region corresponding to the light emission region 14A, and the metal 32 is formed in a region corresponding to the outer edge region of the light emission region 14A in the semiconductor laminated structure 11. COPYRIGHT: (C)2007,JPO&INPIT
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