发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device which reduces the possibility of the occurrence of melting connection failures, as compared to conventional cases and can improve the reliability and productivity. <P>SOLUTION: According to the manufacturing method for the semiconductor device, a first connection terminal is connected to a second connection terminal by a heating process, where a solder bump is melted by exposing it to a temperature higher than the melting point of the solder bump; and during the heating process, the solder bump is exposed at least twice or more times, to a temperature higher than the melting point of the solder bump, and is cooled at least twice or more times to a temperature lower than the melting point of the solder bump. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007149846(A) 申请公布日期 2007.06.14
申请号 JP20050340392 申请日期 2005.11.25
申请人 TOSHIBA CORP;TOSHIBA LSI PACKAGE SOLUTIONS CORP 发明人 SUGIZAKI YOSHIAKI;NOMURA HIROSHI;KOMUDA NAOYUKI;HONMA SOICHI;TOMONO AKIRA
分类号 H01L21/60 主分类号 H01L21/60
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