| 摘要 |
1300186 Semi-conductor devices MOTOROLA Inc 25 June 1971 [22 July 1970] 29961/71 Heading H1K In a method of passivating a mesa PN junction device, a PN junction is formed in a silicon body, a layer 20 of silicon nitride is deposited on the body, a masking layer 18 of silicon dioxide is deposited over this and the silicon nitride is etched away except over that portion of the body which will become the top of the mesa, the silicon dioxide mask is removed, the silicon body is then etched away using the silicon nitride as a mask to form the mesa, a silicon dioxide layer is grown over the sides of the mesa by a thermal method, the silicon nitride layer is removed, and a metal contact layer is formed in its place. |
