IMPROVED AMORPHIZATION/TEMPLATED RECRYSTALLIZATION METHOD FOR HYBRID ORIENTATION SUBSTRATES
摘要
The present invention provides an improved amorphization/ templated recrystallization (ATR) method for fabricating low-defect-density hybrid orientation substrates. ATR methods for hybrid orientation substrate fabrication generally start with a Si layer having a first orientation bonded to a second Si layer or substrate having a second orientation. Selected regions of the first Si layer are amorphized and then recrystallized into the orientation of the second Si layer by using the second Si layer as a template. The process flow of the present invention solves two major difficulties not disclosed by prior art ATR methods: the creation of "corner defects" at the edges of amorphized Si regions bounded by trenches, and undesired orientation changes during a high temperature post-recrystallization defect-removal annealing of non-ATR'd regions not bounded by trenches. In particular, this invention provides a process flow comprisng the steps of (i) amorphization and low-temperature recrystallization performed in substrate regions free of trenches; (ii) formation of trench isolation regions that subsume the defective regions at the edge of the ATR'd regions, and (iii) a high-temperature defect-removal anneal performed with the trench isolation regions in place.
申请公布号
WO2006130360(A3)
申请公布日期
2007.06.14
申请号
WO2006US19417
申请日期
2006.05.18
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;FOGEL, KEITH, E.;SAENGER, KATHERINE, L.;SUNG, CHUN-YUNG;YIN, HAIZHOU