| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sulfonic acid salt and a derivative thereof suitable as a raw material of a photo acid-generating agent or as a photo acid-generating agent for resist materials that can be suppressed particularly in elution into water on ArF immersion exposure and can suppress formation of foreign matter characteristic of immersion exposure to permit effective use thereof, a photo acid-generating agent, and a resist material and a pattern formation method using the same. <P>SOLUTION: The sulfonic acid salt is represented by formula (1): R<SP>1</SP>SO<SB>3</SB>-CH(Rf)-CF<SB>2</SB>SO<SB>3</SB><SP>-</SP>M<SP>+</SP>. In the formula, R<SP>1</SP>is a substituted or unsubstituted 1-20C linear, branched or cyclic alkyl group or a substituted or unsubstituted 6-15C aryl group; Rf is hydrogen or a trifluoromethyl group; and M<SP>+</SP>is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. The sulfonic acid exhibits strong acidity as it has electron-withdrawing fluorine and a sulfonyloxy group at an α-position (and a γ-position) and a β-position, respectively. Moreover, the sulfonic acid permits a wide range of molecular designs as various substituent groups varying from bulky to less bulky groups can be readily introduced by replacing its ester portion. <P>COPYRIGHT: (C)2007,JPO&INPIT |
