发明名称 METHOD FOR PRODUCING CRYSTALLINE SEMICONDUCTOR PARTICLE, AND METHOD FOR PRODUCTION OF PHOTOELECTRIC CONVERSION DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method capable of producing a hydrogen-impregnated crystalline semiconductor particle through a simple and safe process, and also to provide a method for producing a photoelectric conversion device having high photoelectric conversion efficiency by using the crystalline semiconductor particle obtained by the above production method. <P>SOLUTION: The crystalline silicon particles 3 are produced by discharging and dropping in a granular state, a silicon melt 11 which is a raw material of the particles 3 and cooling the melt 11 during its drop to coagulate. In this case, the silicon melt 11 is dropped in the atmosphere containing the hydrogen compounds, and is cooled during its drop and coagulated. Thereby, hydrogen is bonded to a dangling bond in a crystal, thus producing the crystalline silicon particle 3 whose crystal defect is inactivated. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007145616(A) 申请公布日期 2007.06.14
申请号 JP20050339601 申请日期 2005.11.25
申请人 KYOCERA CORP 发明人 TOMITA KENJI;ARIMUNE HISAO
分类号 C01B33/02;H01L21/20;H01L31/04 主分类号 C01B33/02
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