| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth system capable of performing a vapor phase epitaxial growth of wafer or a maintenance of furnace safely and efficiently, even under hybrid furnace conditions of operation and standby. <P>SOLUTION: The vapor phase epitaxial growth system is equipped with at least a plurality of reactors for performing the vapor epitaxial growth with respect to a wafer, and a scrubber processing exhaust gas. Each of the plurality of reactors is connected with at least 3 gas exhaust lines that are independent of each other, respectively. A first line is connected to the scrubber so as to process the exhaust gas; a second line is used for purging air in the reactor; and a third line is used for releasing the pressure in the reactor. The first and second gas exhaust lines are equipped with valves for switching exhausting and shutting, and an exhaust gas by making only either side pass through only either of the reactors, and the third gas exhaust line is equipped with a valve for releasing pressure, which automatically opens when the pressure in the reactor reaches a prescribed value or higher. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
