发明名称 METHOD FOR PRODUCING THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a thin film with a relatively large area having reduced defects from plasma generated by the application of pulse electrode. SOLUTION: Regarding the method for producing a thin film, pulse voltage is applied to the space between a base electrode 5 and a counter electrode 7 counter to the base electrode 5 under the pressure of 100 to 1,600 Torr in an atmosphere comprising a carbon source-containing gaseous starting material, thus discharge plasma is generated, so as to form a thin film 6. The pulse duration time of the pulse voltage is 10 to 1,000 nsec. The thin film 6 is formed as the counter electrode 5 is relatively moved to the base electrode 5 toward a direction E crossed with the applying direction W of the pulse voltage. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007146262(A) 申请公布日期 2007.06.14
申请号 JP20050345846 申请日期 2005.11.30
申请人 NGK INSULATORS LTD 发明人 SAITO TAKAO;KONDO YOSHIMASA
分类号 C23C16/26 主分类号 C23C16/26
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