TRANSISTOR COMPRISING LAYERS OF SILICON DIOXIDE AND SILICON NITRIDE

摘要

A semiconductor structure in which a substrate having surface regions of opposite type conductivity is covered with two different insulating layers. In a specific structure, the regions in the substrate form an isolated gate field effect transistor with a thin layer of silicon nitride forming the insulation in the gate portion and a thicker layer of silicon dioxide forming the insulation over the remainder of the device.