| 摘要 |
The semiconductor device fabrication method comprises the step of forming a first insulation film 48 on a semiconductor substrate 10 and a ferroelectric capacitor 42 ; the step of forming first interconnections 56 a- 56 c; the step of forming a second insulation film 60 ; the step of planarizing the surface of the second insulation film 60 ; the step of making heat treatment with a heat treatment furnace to remove water from the second insulation film 60 ; the step of making heat treatment in a plasma atmosphere generated by using N<SUB>2</SUB>O gas or N<SUB>2 </SUB>gas; the step of removing water from the second insulation film 60 and nitriding the surface of the second insulation film 60 ; the step of forming a barrier film 62 on the second insulation film 60 ; the step of forming contact holes 68 in the barrier film 62 and the second insulation film 60 ; and the step of burying conductor plugs 70 in the contact holes 68.
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