| 摘要 |
The present invention intends to provide a technique that can improve the capacitance density while securing the withstand voltage of a capacitor element. In order to achieve the above object, the present inventive manufacturing method of a semiconductor device includes forming a metal film on a silicon oxide film, forming a SiN film on the metal film, forming a metal film on the SiN film, etching the upper most metal film with a photoresist film as a mask to form an upper electrode, thereafter forming a silicon oxide film that covers the upper electrode, patterning by etching the silicon oxide film and the SiN film with a photoresist film as a mask to form a capacitor insulating film and sputter-etching the lowermost metal film with the patterned silicon oxide film as a mask to form a lower electrode.
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