发明名称 |
Active region spacer for semiconductor devices and method to form the same |
摘要 |
A semiconductor device and method for its fabrication are described. An active region spacer may be formed on a top surface of an isolation region and adjacent to a sidewall of an active region. In one embodiment, the active region spacer may suppress the formation of metal pipes in the active region.
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申请公布号 |
US2007132057(A1) |
申请公布日期 |
2007.06.14 |
申请号 |
US20050298095 |
申请日期 |
2005.12.08 |
申请人 |
CURELLO GIUSEPPE;POST IAN R;JAN CHIA-HONG;TYAGI SUNIT;BOHR MARK |
发明人 |
CURELLO GIUSEPPE;POST IAN R.;JAN CHIA-HONG;TYAGI SUNIT;BOHR MARK |
分类号 |
H01L29/00;H01L21/76 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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