| 摘要 |
<p>A non-radiation hardened N-channel transistor used in a power switching circuit functioning in a high-ionizing, radiation-dose environment. The circuit including at least one non-radiation hardened N-channel MOSFET switching transistors, the transistor having a gate, drain and a source. The circuit also includes a stored voltage source. The stored voltage source is in series with the gate of the at least one non-radiation hardened N channel MOSFET switching transistors. A high impedance bleeder resistor is connected to the stored voltage source for returning the positive terminal of the stored voltage source to the channel MOSFET source terminal.</p> |
