| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution for metal which has a rapid chemical mechanical polishing speed, has little dishing with improved planarity and copper/tantalum selectivity, and can manufacture an LSI. <P>SOLUTION: The polishing solution for metal is mainly used for polishing copper wiring in the chemical mechanical flattening of a semiconductor device, and contains at least one compound expressed by a general formula (I). In the formula, R<SP>1</SP>and R<SP>2</SP>individually represent a hydrogen atom, an alkyl group, a heterocycle group, or an aryl group, and R<SP>3</SP>and R<SP>4</SP>individually represent a hydrogen atom, or an alkyl group or an aryl group containing a carboxyl group, etc. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
