| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a polymetal gate structure and can be manufactured in a simple process while it has a metal silicide layer for contact on a source drain region. SOLUTION: The semiconductor device has a silicon substrate, an element isolation insulating film, an active region, a gate electrode prepared through the gate insulating film, a diffusion layer prepared in the active region of the gate electrode both sides, an interlayer dielectric layer, and a plug filled in an opening formed at the interlayer dielectric layer, and further has a region for forming a contact surrounded by the element isolation insulating film, and a conductive layer formed in this region for forming a contact. The gate electrode is extended therethrough so that it may be overlapped with the part of the region for forming the contact, connected with the conductive layer by this overlapping, the plug contacts with the conductive layer in the other portion of the region for forming the contact, and connected electrically with the gate electrode through the conductive layer. COPYRIGHT: (C)2007,JPO&INPIT |
