| 摘要 |
PROBLEM TO BE SOLVED: To provide a blue semiconductor laser that can substantially decrease series resistance of a semiconductor laser using GaN-series materials in which highly concentrated p-type doping has so far been difficult and a low-resistance semiconductor laser has been difficult to materialize, and can drive using a standard 5V power source. SOLUTION: By noting that lateral conduction of a high-concentration dope with a superlattice structure may be effective in lowering laser resistance, the superlattice structure has been employed in part in an self-aligned structure laser, and current spreading by this layer is used to lower resistance of an element. COPYRIGHT: (C)2007,JPO&INPIT
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