| 摘要 |
PROBLEM TO BE SOLVED: To fully reduce the parasitic capacity of a crossing section even if the pattern of a gate electrode is in a latter shape, and to prevent high-frequency signals from being leaked by arranging a nitride film and a hollow section on gate wiring, and extending a source wiring electrode or a drain wiring electrode to it. SOLUTION: In a compound semiconductor switch circuit device, an area above the gate wiring is covered with a nitride film having a film thickness of 3,000Åwith a large relative dielectric constant and a hollow section having a thickness of 2μm with a small relative dielectric constant, and a source wiring electrode or a drain wiring electrode is provided on it, thus reducing a capacity at the crossing section. One end of the gate electrode is extended to form a bent section, and the bent section is arranged between source and drain electrodes, thus arranging the gate electrode (bent section) 17a or the gate wiring between all the source and drain electrodes in a switch MMIC. The gate electrode of an off-side FET is at the ground potential as a high-frequency signal, thus preventing the high-frequency signal between the drain and source electrodes from leaking, and greatly improving distortion characteristics of the switch MMIC according to the arrangement of the hollow section of the crossing section. COPYRIGHT: (C)2007,JPO&INPIT
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