Solid State Image Sensing Device and Manufacturing and Driving Methods Thereof

摘要

A solid state image sensing device is composed of a second conductive type well area 33 , a photoelectric conversion area 40 , a ring shaped gate electrode 35 , a transfer gate electrode 41 , a second conductive type drain area 38 , a second conductive type source area 36 , and a first conductive type source neighborhood area 37.