Dissolution inhibitors in photoresist compositions for microlithography

摘要

The invention relates to photoresist composition suitable for use at 10-165 nm comprising: (a) a polymeric binder (b) a photoactive compound (c) a dissolution inhibitor, the dissolution inhibitor comprising at least (i) two aromatic groups, (ii) fluorine and (iii) a blocked acid group which when unblocked has a pKa<12. Preferred dissolution inhibitors are optionally blocked bisphenol derivates in which the bridging carbon atom is substituted with a fluorinated aliphatic group.