| 发明名称 |
CU WIRING FORMATION METHOD |
| 摘要 |
A Cu wiring formation method comprises the steps of: forming a Cu film on a wafer by plating; subjecting the Cu film to anticorrosive treatment on the surface thereof after the plating; and annealing the Cu film after the anticorrosive treatment.
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| 申请公布号 |
US2007134920(A1) |
申请公布日期 |
2007.06.14 |
| 申请号 |
US20060556382 |
申请日期 |
2006.11.03 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
HIRANO SHINYA;SUDO YOSHIMI;IMAIZUMI TETSUNORI;YOSHIDA YASUHIRO |
| 分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
| 代理机构 |
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代理人 |
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| 主权项 |
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