| 摘要 |
A thin film transistor substrate of a horizontal electronic field type and a method for fabricating the same are provided to improve a transmittance and a contrast ratio by forming a cubic structure of a common electrode and a pixel electrode on a passivation layer. A gate line(110) and a common line(120) are formed in parallel to each other on a lower substrate. A data line(140) crosses a gate line to define a pixel region. A gate insulating layer is positioned between the data line and the gate line. A thin film transistor(150) is formed at an intersection between the data line and the gate line. A passivation layer is formed on the gate insulating layer to cover the thin film transistor. A common electrode(180) is connected through a contact hole to the common line. A pixel electrode(170) is connected through the contact hole to the thin film transistor. A cubic structure of the common electrode and the pixel electrode is formed on the passivation layer.
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