Method for manufacturing single crystal semiconductor

摘要

The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconductor more uniformly during the pulling of the single crystal semiconductor from a melt. In the course of pulling the single crystal semiconductor ( 6 ), the rotating velocity (omega 2 ) of the single crystal semiconductor ( 6 ) being pulled is adjusted to a predetermined value or higher, and a magnetic field having a strength in a predetermined range is applied to the melt ( 5 ). Particularly, the crystal peripheral velocity is adjusted to 0.126 m/sec or higher, and M/V^1/3 is adjusted to 35.5<=M/V^1/3<=61.3. More desirably, the crystal peripheral velocity is adjusted to 0.141 m/sec or higher, and M/V^1/3 is adjusted to 40.3<=M/V^1/3<=56.4.