| 摘要 |
According to an aspect of the invention, a nonvolatile semiconductor memory comprises: a semiconductor substrate; a trench formed in the semiconductor substrate; a first insulating film being formed on a wall surface of the trench; a floating gate electrode formed on the first insulating film inside the trench; a source region formed in the semiconductor substrate; a drain region formed in the semiconductor substrate; a channel region formed between the source region and the drain region in the semiconductor substrate, a second insulating film formed on a surface of the semiconductor substrate; and a control gate electrode formed on the channel region and a surface of the second insulating film. The channel region is adjacent to the trench. A storage state of the nonvolatile semiconductor memory is formed by injecting or drawing charge into or from the floating gate electrode when a tunnel current flows through the first insulating film.
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