| 摘要 |
A ferroelectric memory device includes: a memory cell having a transistor and a ferroelectric capacitor connected in series between a bit line and a plate line, and a connecting section below the ferroelectric capacitor; a dummy cell having a transistor, a ferroelectric capacitor and a connecting section, wherein the dummy cell has an electrically disconnected section among the bit line, the transistor, the ferroelectric capacitor, the connecting section and the plate line.
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