| 摘要 |
A light scattering layer for an electronic device comprising nano-particles, a junction structure for a thin film transistor comprising the light scattering layer, and methods of forming the same are provided. The light scattering layer for the electronic device comprises a carbide-semimetal or a carbide-metal comprising nano-particles comprising Si or a metal. In the junction structure for a thin film transistor according to an embodiment of the present invention, the light scattering layer is interposed between a first protective layer and a second protective layer comprising (ZnS)<SUB>1-x</SUB>(SiC)<SUB>x</SUB>, W<SUB>1-x</SUB>C<SUB>x</SUB>, Ta<SUB>1-x</SUB>C<SUB>x</SUB>, and Mo<SUB>1-x</SUB>C<SUB>x</SUB>, wherein 0<x<1. First and second capping layers comprising M<SUB>1-y</SUB>((ZnS)<SUB>1-x</SUB>(SiC)<SUB>x</SUB>)<SUB>y</SUB>, M<SUB>1-y</SUB>(W<SUB>1-x</SUB>C<SUB>x</SUB>)<SUB>y</SUB>, M<SUB>1-y</SUB>(Ta<SUB>1-x</SUB>C<SUB>x</SUB>)<SUB>y</SUB>, and M<SUB>1-y</SUB>(Mo<SUB>1-x</SUB>C<SUB>x</SUB>)<SUB>y</SUB>, wherein 0<x<1, 0<y<1, and M is Si, Ta, W or Mo, may be interposed between the first protective layer and the light scattering layer, and between the light scattering layer and the second protective layer, respectively. The layers are sequentially formed in-situ, without breaking a vacuum state after the process of forming each layer is performed.
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