发明名称 |
Phase-change random access memory device and method of operating the same |
摘要 |
A phase-change random access memory device may include a phase-change pattern, a first electrode structure connected to the phase-change pattern, and a second electrode structure spaced apart from the first electrode structure and connected to the phase-change pattern, wherein at least one of the first electrode structure and the second electrode structure includes a plurality of resistor patterns connected to the phase-change pattern in parallel.
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申请公布号 |
US2007133270(A1) |
申请公布日期 |
2007.06.14 |
申请号 |
US20060515422 |
申请日期 |
2006.09.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG CHANG W.;LEE SU-YOUN;JEONG WON-CHEOL;PARK JAE-HYUN;AHN SU-JIN;YEUNG FAI |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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