SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A semiconductor light emitting element having improved light extracting efficiency and a method for manufacturing a semiconductor light emitting element are provided. The semiconductor light emitting element (1) is provided with a supporting substrate (2), and a semiconductor laminated structure (6) which includes an MQW active layer (13) which emits light and a topmost n-GaN layer (14). On an upper plane of the n-GaN layer (14) of the semiconductor laminated structure (6), a plurality of cone-shaped protruding sections (14a) are formed. The protruding sections (14a) are formed so that the average value (W<SUB>A</SUB>) of the width (W) of a bottom plane of the protruding section (14) satisfies an inequality of W<SUB>A</SUB>=?/n, where ? is the wavelength of light emitted from the MQW active layer and n is the refraction index of the n-GaN layer (14).