| 发明名称 |
METHOD FOR FORMING DIELECTRIC FILM |
| 摘要 |
<p>Disclosed is a method for forming an SiOCH film which is characterized in that an SiOCH film is formed on a substrate by repeating, a plurality of times, a unit film forming process which includes a deposition step wherein an SiOCH film element is deposited by a plasma CVD method using an organosilicon compound as the raw material, and a hydrogen plasma processing step wherein the deposited SiOCH film element is treated with hydrogen plasma.</p> |
| 申请公布号 |
WO2007066658(A1) |
申请公布日期 |
2007.06.14 |
| 申请号 |
WO2006JP324263 |
申请日期 |
2006.12.05 |
| 申请人 |
TOKYO ELECTRON LIMITED;IDE, SHINJI;OSHIMA, YASUHIRO;KASHIWAGI, YUSAKU |
发明人 |
IDE, SHINJI;OSHIMA, YASUHIRO;KASHIWAGI, YUSAKU |
| 分类号 |
H01L21/316;H01L21/768;H01L23/522 |
主分类号 |
H01L21/316 |
| 代理机构 |
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