GROUP III NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR DEVICE

摘要

Disclosed is a semiconductor laser (300) comprising a p-type GaN guide layer (107), a current-narrowing layer (314) arranged on the p-type GaN guide layer (107) and provided with an opening (314A), and a p-type cladding layer (108) arranged on the current-narrowing layer (314) and filling the opening (314A) formed in the current-narrowing layer (314). The interface between the p-type cladding layer (108) and the p-type GaN guide layer (107) exists at the bottom of the opening (314A). The current-narrowing layer (314) is a group III nitride semiconductor layer, and the width of the opening (314A) is smallest at the upper end thereof.