METHOD FOR THE MANUFACTURE OF A STRAINED SILICON-ON-INSULATOR STRUCTURE
摘要
The present invention is directed to a strained silicon on insulator (SSOI) structure having improved surface characteristics, such as reduced roughness, low concentration of LPDs, and lower contamination, and a method for making such a structure.
申请公布号
WO2007024433(B1)
申请公布日期
2007.06.14
申请号
WO2006US30171
申请日期
2006.08.02
申请人
MEMC ELECTRONIC MATERIALS, INC.;JONES, ANDREW, M.;FEI, LU
