| 摘要 |
A method for manufacturing a light emitting diode of a nitride compound semiconductor and a light emitting diode manufactured using the same are provided to reduce the density of crystal defects by using a super lattice layer including upper semiconductor layers and nano islands which are alternatively formed in the supper latice layer. A buffer layer(23) is formed on a substrate(21). A conductive lower semiconductor layer(25) of an AlxInyGa(1-X-Y)(0 X, Y 1 and 0 X+Y 1) material layer is formed on the buffer layer. Nano islands(27) and first conductive upper semiconductor layers of an AlxInyGa(1-X-Y)(0 X, Y 1 and 0 X+Y 1) material layer are alternatively laminated to form a super lattice layer(28). An active layer(31) is formed on the super lattice layer. A second conductive semiconductor layer(33) of an AlxInyGa(1-X-Y)(0 X, Y 1 and 0 X + Y 1) material layer is formed on the active layer.
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