| 摘要 |
A contact for use with a memory element of a semiconductor device structure includes a conductive element and a thermal insulator component. The conductive element establishes an electrical path to the memory element, while the thermal insulator component thermally insulates the memory element. The thermal insulator component may reduce an amount of current required to change a conductivity state of the memory element, particularly when the memory element includes a so-called "phase change" element. Methods for fabricating such contacts are also disclosed.
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