SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To improve a driving force of an MISFET by imposing a stress on a channel forming area effectively using a stress film while preventing a failure of contact.

SOLUTION: An insulating side wall spacer 9 is formed on sides of gate electrodes 20n, 20p of the MISFET formed on a semiconductor substrate 1. The heights of the gate electrodes 20n, 20p are lower than the upper edge of the side wall spacer 9 positioned on each sides. A stress film 13 producing a stress in the channel forming area is formed on the MISFET to cover the electrodes 20n, 20p. The film thickness of portions in the stress film 13 which are formed on the gate electrodes 20n, 20p is larger than that of the other portion.

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