| 摘要 |
PROBLEM TO BE SOLVED: To prevent production of fence-like residue when a level difference shape of two or more steps is formed by dry etching. SOLUTION: After a two layer mask of an aluminum film 102 and an organic film resist 103 is formed on a silicon substrate 101 and patterned through exposure, development and wet etching, first time dry etching is performed to form a recess 104 including a level difference shape of one step. After removing a deposition film 105 on the sidewall of the recess 104 by ashing, second time dry etching is performed to form a structure including a level difference shape of two steps. COPYRIGHT: (C)2007,JPO&INPIT
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