发明名称 Id tag
摘要 When a predetermined voltage is applied between electrodes ( 302 ), metal ions deposit in a solid electrolyte ( 308 ), and thereby a conduction channel ( 310 ) is formed therein. The solid electrolyte switch ( 300 ) is thus turned on. Because this deposition mechanism is reversible, application of reverse voltage between the electrodes of the solid electrolyte switch ( 300 ) already turned on makes the deposited metal atoms to migrate in the solid electrolyte to thereby thin the conduction channel 300 , thereby the channel finally disappears, and the solid electrolyte switch ( 300 ) is turned into a non-conductive state. Use of this switch successfully realizes an IC tag which can automatically be nullified without artificial nullification.
申请公布号 US2007132590(A1) 申请公布日期 2007.06.14
申请号 US20040583568 申请日期 2004.12.17
申请人 HATTORI WATARU;HONGO HIROO;NIHEI FUMIYUKI;SUNAMURA HIROSHI 发明人 HATTORI WATARU;HONGO HIROO;NIHEI FUMIYUKI;SUNAMURA HIROSHI
分类号 G08B13/14;G06K19/073;G06K19/077;G08B1/00;H04Q5/22 主分类号 G08B13/14
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