A power semiconductor device having a termination structure that includes a polysilicon field plate, a metallic field plate, and a polysilicon equipotential ring.
申请公布号
WO2007035608(A3)
申请公布日期
2007.06.14
申请号
WO2006US36238
申请日期
2006.09.15
申请人
INTERNATIONAL RECTIFIER CORPORATION;CAO, JIANJUN;AMANI, NAZANIN
